Formation of inner spacer on nanosheet mosfet

ABSTRACT

A method of forming a field effect transistor (FET) includes performing an oxidation on a nanosheet structure having alternating sheets of silicon and silicon germanium. An oxide etch is performed to remove portions of the sheets of silicon germanium. Other embodiments are also described herein.

BACKGROUND

This patent application relates in general to integrated circuit devicestructures and their fabrication. More specifically, the patentapplication relates to the fabrication and resulting structures oftransistors with inner spacers formed using low temperature plasmaoxidation.

In some configurations of a nanosheet metal oxide semiconductor fieldeffect transistor (MOSFET), an inner spacer protects the nanosheetchannel from the source and drain regions and provides electricisolation and support between the channels. Existing methods of creatingan inner spacer can result in poor profile control during etching (suchas HF-HCL or reactive ion etch (RIE)). Existing methods of creating aninner spacer can also result in etch-back in the spacer.

SUMMARY

Described herein is a method of forming portions of a transistor in anintegrated circuit device. In one or more embodiments, the methodincludes receiving or forming a nanosheet structure having alternatingsheets of silicon and silicon germanium. An oxidation is performed onthe alternating sheets of silicon and silicon germanium, and an oxideetch is performed to remove portions of the sheets of silicon germanium.

Embodiments are also directed to a method that includes depositing ahard mask layer on a nanosheet structure. The hard mask layer isoxidized. Portions the hard mask layer are removed to reveal areas ofthe nanosheet structure to be etched. The revealed areas are etched, andthe hard mask layer is removed.

Embodiments are also directed to a field effect transistor (FET). TheFET includes a nanosheet channel region and a gate region around thenanosheet channel region. The nanosheet channel region is formed byforming a nanosheet structure having alternating sheets of silicon andsilicon germanium. An oxidation is performed on the alternating sheetsof silicon and silicon germanium. An oxide etch is performed to removeportions of the sheets of silicon germanium.

Additional features are realized through the techniques of the presentinvention. Other embodiments are described in detail herein and areconsidered a part of the claimed invention. For a better understandingof the invention with the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing features are apparent from the followingdetailed description taken in conjunction with the accompanying drawingsin which:

FIG. lA depicts a nanosheet transistor in the process of beingconstructed;

FIG. 1B depicts the nanosheet transistor with an uneven indent problem;

FIG. 1C depicts a nanosheet transistor in the process of beingconstructed;

FIG. 1D depicts the nanosheet transistor with spacer damage;

FIG. 2 depicts an assembly of two transistor in the process of beingconstructed;

FIG. 3 depicts the two transistors after an oxidation has beenperformed;

FIG. 4 depicts the two transistors after an etch has been performed;

FIG. 5 depicts the two transistors after the deposition of a low-k hardmask layer;

FIG. 6 depicts the two transistors after the addition of an organicplanarization layer and an oxygen enriching process on the hard mask;

FIG. 7 depicts the two transistors after the removal of theoxygen-enriched hard mask;

FIG. 8 depicts the two transistors after an etch, such as a reactive ionetch, performed on areas not protected by the hard mask;

FIG. 9 depicts the two transistors after the removal of the hard mask;

FIG. 10 is a flow diagram illustrating a methodology according to one ormore embodiments.

DETAILED DESCRIPTION

It is understood in advance that although a detailed description of anexemplary spacer formation is included, implementation of the teachingsrecited herein are not limited to the particular structure describedherein. Rather, embodiments of the present invention are capable ofbeing implemented in conjunction with any other type of integratedcircuit device, now known or later developed.

For the sake of brevity, conventional techniques related tosemiconductor device and integrated circuit (IC) fabrication may or maynot be described in detail herein. Moreover, the various tasks andprocess steps described herein can be incorporated into a morecomprehensive procedure or process having additional steps orfunctionality not described in detail herein. In particular, varioussteps in the manufacture of semiconductor devices andsemiconductor-based ICs are well known and so, in the interest ofbrevity, many conventional steps will only be mentioned briefly hereinor will be omitted entirely without providing the well-known processdetails.

The following definitions and abbreviations are to be used for theinterpretation of the claims and the specification. As used herein, theterms “comprises,” “comprising,” “includes,” “including,” “has,”“having,” “contains” or “containing,” or any other variation thereof,are intended to cover a non-exclusive inclusion. For example, acomposition, a mixture, process, method, article, or apparatus thatcomprises a list of elements is not necessarily limited to only thoseelements but can include other elements not expressly listed or inherentto such composition, mixture, process, method, article, or apparatus.

As used herein, the terms “invention” or “present invention” arenon-limiting terms and not intended to refer to any single aspect of theparticular invention but encompass all possible aspects as described inthe specification and the claims.

Described herein is a method of forming transistors with an inner spacerformed using a novel technique. Turning now to an overview ofembodiments of the present invention, one or more embodiments provide amethodology for forming an inner spacer using low temperature plasmaoxidation. In addition, oxidation of a hard mask layer transforms SiN toSiON, which has a higher etch resistance, resulting in a more preciseetch.

With reference to FIGS. 1A through 1D, issues arising from currentmethods will be described. In FIG. 1A, a fin 150 of a nanosheettransistor 100 is illustrated. More particularly, a substrate 102 ispresent. Above substrate 102 are alternating sheets 104 formed fromsilicon (Si) and sheets 106 formed from silicon germanium (SiGe). Atopthese sheets 104 and 106 is a dummy gate including a polysilicon gate110 surrounded by a nitride 112. During processing, the SiGe layers 106are made to be narrower than the Si layers 104 in the X direction. InFIG. 1B, a possible problem of uneven indent is shown. The layers ofSiGe are supposed to have an equal width. However, because of theprocesses used, the layers of SiGe closest to polysilicon gate 110 arenarrower than the layers of SiGe near substrate 102.

In FIGS. 1C and 1D, another potential problem is illustrated. Thesefigures illustrate a later step, where silicon nitride (SiN) hard mask112 extends to the alternating Si layers 104 and SiGe layers 106. FIG.1C illustrates the gate/Fin profile after conformal inner spacerdeposition. In FIG. 1D, it is shown that, SiN layer 112 may or may nothave a uniform thickness after the inner spacer etch. This can bereferred to as spacer damage and can be caused by process variations.Spacer damage can result in less insulation around the gate, causingcontact leakage or otherwise degrading the performance of thetransistor.

Turning now to a more detailed description of an embodiment of thepresent invention, a fabrication methodology for forming a spacer for atransistor in an integrated circuit package in accordance with one ormore embodiments will now be described with reference to FIGS. 2 through11. Referring now to FIG. 2, an initial structure 200 is illustrated.Structure 200 is a traditional nanosheet structure constructed in one ofa variety of different ways, known in the art.

Structure 200 includes two transistors, 230 and 260. These transistors230 and 260 will be formed on a single substrate 202. At this point inthe formation of the transistors, a standard formation process has takenplace up to the formation of the gate.

Atop substrate 202 are a series of alternating layers of silicon (Si)203 and silicon germanium (SiGe) 204, a poly silicon gate 206, a siliconnitride 208, and an oxide hard mask layer 210. Silicon nitride 208 is aspacer to protect the gate 206. The alternating Si layers 203 are thechannels, with the SiGe layers 204 acting as sacrificial layers. Whilethree Si layers 203 and four SiGe layers 204 are illustrated in FIG. 2,it should be understood that other numbers of layers can be used invarious embodiments.

In FIG. 3, the structure is shown after a low-temperature radiofrequency (RF) plasma oxidation has been performed. The remaining layersare the same as in FIG. 2. Arrows 320 represent the oxidation that hasbeen performed. This oxidation is intended to affect layers 203 and 204.The temperature of the plasma oxidation is in the range of 200 to 400degrees Celsius. A low temperature helps to prevent migration ofgermanium from a SiGE layer 204 to a Si layer 203. The oxidation ratesof a Si layer 203 is slower than the oxidation of a SiGe layer 204. Thisis due to the lower Gibbs free energies for the formation of GeO₂,compared to that of SiO₂.

In FIG. 4, an isotropic oxide etch (SiO₂ and GeO₂) is performed. Thisstep removes more of SiGe layers 204 than it does the Si layers 203.Because of the oxidation described above with respect to FIG. 3, theresult is that each of the SiGe layers 204 have the same amount ofmaterial removed, alleviating the problem of top-down variation that wasdescribed earlier.

There is an alternative embodiment for the steps illustrated in respectto FIGS. 3 and 4. In the alternative embodiment, an isotropic dry etchis performed. An isotropic dry etch can include the use of ammonia withfluorine as a reaction gas. This type of etch has a good selectivity(i.e., only affecting SiGe layers 204 and not Si layers 203) and resultsin an improved top-down etch uniformity of SiGe layers 204.

FIG. 5 illustrates the operation after the SiGe layers 204 have beenetched, (whether the method of FIGS. 3 and 4 was used or the isotropicdry etch, or any other method now known or developed in the future). InFIG. 5, a deposition of a low-K layer 520 is performed. Layer 520 caninclude a nitride. Exemplary nitrides can include SiN, atomic layerdeposition (ALD) SiBCN, flowable chemical vapor deposition (FCVD) Low-KSiN, and spin-on SiBCN. Nitride 520 serves as a hard mask to protectareas underneath the nitride from various processes.

In FIG. 6, an organic planarization layer (OPL) 630 can be added toprotect the fin from downstream ion implantation. In addition, oxygenions are implanted on layer 520 to form an oxygen-enriched shoulder areaof layer 520. This is could be performed by standard ion implantationtechnique with tilted beam. Such a step can, for example, transform SiNmaterial into SiON. The SiON has a higher etch resistance than does SiN.Therefore, the nitride spacer profile is better preserved in futureetching steps than it was in the prior art.

In FIG. 7, an isotropic SiON recess is performed to remove SiON fromvarious areas of layer 520, including the sidewall. This process refinesthe profile of the hard mask layer 520 in preparation for the stepdescribed below. This can be a dry etch or a wet etch.

In FIG. 8, an etch is performed to remove material that is not protectedby the newly oxidized layer 520. In some embodiments, the etch is ananisotropic SiN reactive ion etch (RIE). The oxidized layer 520 hardmask could effectively protect layers underneath oxidized layer 520,such as oxide hard mask layer 210, polysilicon gate 208, SiGe layers203, and Si layers 204.

In FIG. 9, an etch has been performed to strip off layer 520. The etchcan be a highly selective SiON etch such that it affects only layer 520.Thereafter, traditional processing steps can be performed to finalizethe creation of the integrated circuit device.

FIG. 10 is a flow diagram illustrating a methodology 1000 according toone or more embodiments. At block 1002, an initial structure isprovided. The initial structure includes a nanosheet structure ofalternating sheets of silicon germanium and silicon, atop a substrate. Agate structure is located on the nanosheet structure. At block 1004, anoxidation is performed to oxidize the layers of silicon and silicongermanium. At block 1006, an oxide etch is performed to remove portionsof the silicon and silicon germanium layers. Due to the structural andoxidation rate differences between the silicon layer and the silicongermanium layer, more of the silicon germanium is removed than thesilicon. In addition, relatively equal amounts are removed from eachlayer, resulting in an elimination of the above-described indentproblem. At block 1008, a low-K hard mask layer, such as a nitride, isdeposited. At block 1010, oxygen is implanted into the low-K hard masklayer. At block 1012, the profile oxygen enriched hard mask layer isrefined to prepare for block 1014, when an etch is performed to removethe areas that are exposed (not covered by the oxygen-enriched hard masklayer). At block 1016, the oxygen enriched hard mask layer is removed.Thereafter, normal processing steps are performed to complete thesemiconductor structure.

The resulting structure has none of the issues described above, such asthe SiGe indent or the SiN etch-back. Instead, the SiGe layers haveroughly the same dimensions and the SiN layer have no etch-backproblems.

Thus, it can be seen from the forgoing detailed description andaccompanying illustrations that embodiments of the present inventionprovide structures and methodologies for providing an inner spacer thataddresses problems seen in previous implementations.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments described herein. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdescribed herein.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form described herein. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiment was chosen and described in order to best explain theprinciples of the inventive teachings and the practical application, andto enable others of ordinary skill in the art to understand theinvention for various embodiments with various modifications as aresuited to the particular use contemplated.

The diagrams depicted herein are just one example. There can be manyvariations to this diagram or the operations described therein withoutdeparting from the spirit of the invention. For instance, the operationscan be performed in a differing order or operations can be added,deleted or modified. All of these variations are considered a part ofthe claimed invention.

While various embodiments have been described, it will be understoodthat those skilled in the art, both now and in the future, can makevarious modifications which fall within the scope of the claims whichfollow. These claims should be construed to maintain the properprotection for the invention first described.

1. A method of forming portions of a transistor, the method comprising:performing an oxidation on alternating sheets of silicon and silicongermanium of a nanosheet structure; and performing an oxide etch toremove portions of the sheets of silicon germanium; wherein: the oxideetch is an isotropic oxide etch (SiO2 and GeO₂) that is configured toremove more material from the sheets silicon germanium than the sheetsof silicon and further configured such that approximately the sameamount of material is removed from each sheet.
 2. The method of claim 1wherein: performing the oxidation comprises performing a low-temperatureradio-frequency plasma oxidation.
 3. The method of claim 2 wherein: thelow-temperature radio-frequency plasma oxidation is configured tooxidize the sheets of silicon germanium more than the sheets of silicon.4. (canceled)
 5. The method of claim 1 wherein: the oxide etch is anisotropic dry oxide etch configured to remove more material from thesheets of silicon germanium than the sheets of silicon.
 6. The method ofclaim 5 wherein: the isotropic dry etch comprises the use of ammoniawith fluorine as a reaction gas.
 7. The method of claim 1 wherein: adummy gate structure is positioned above the alternating sheets ofsilicon and silicon germanium.
 8. The method of claim 1 furthercomprising: depositing a hard mask layer on the nanosheet structure;oxidizing the hard mask layer; removing portions of the hard mask layerto reveal areas of the nanosheet structure to be etched; etching therevealed areas of the nanosheet structure; and removing the hard masklayer.
 9. The method of claim 8 wherein: the hard mask layer is anitride.
 10. The method of claim 9 wherein: the hard mask is selectedfrom SiN, atomic layer deposition (ALD) SiBCN, flowable chemical vapordeposition (FCVD) Low-K SiN, and spin-on SiBCN.
 11. The method of claim9 wherein: oxidizing the hard mask layer comprises using a standard ionimplantation technique to transform the nitride hard mask into anoxidized nitride hard mask that has greater etch resistance.
 12. Amethod comprising: depositing a hard mask layer on a nanosheetstructure, wherein the hard mask layer is a nitride including silicon;oxidizing the hard mask layer to increase the etch resistance of thehard mask layer such that an etch of the hard mask layer is moreuniform; removing portions of the hard mask layer to reveal areas of thenanosheet structure to be etched; etching the revealed areas of thenanosheet structure; and removing the hard mask layer.
 13. (canceled)14. The method of claim 12 wherein: the hard mask is selected from SiN,atomic layer deposition (ALD) SiBCN, flowable chemical vapor deposition(FCVD) Low-K SiN, and spin-on SiBCN.
 15. The method of claim 12 wherein:removing portions of the hard mask layer comprises performing anisotropic recess of the hard mask layer.
 16. A field effect transistor(FET) comprising: a nanosheet channel region; and a gate region aroundthe nanosheet channel region; the nanosheet channel region formed by:receiving a nanosheet structure comprising alternating sheets of siliconand silicon germanium; performing an oxidation of the alternating sheetsof silicon and silicon germanium; and performing an oxide etch to removeportions of the sheets of silicon germanium.
 17. The FET of claim 16wherein: performing the oxidation comprises performing a low-temperatureradio-frequency plasma oxidation.
 18. The FET of claim 17 wherein: thelow-temperature radio-frequency plasma oxidation is configured tooxidize the layers of silicon germanium more than the layers of silicon.19. The FET of claim 16 wherein the nanosheet region is further formedby: depositing a hard mask layer on the nanosheet structure; oxidizingthe hard mask layer; removing portions the hard mask layer to revealareas of the nanosheet structure to be etched; etching the revealedareas of the nanosheet structure; and removing the hard mask layer. 20.The FET of claim 19 wherein the hard mask layer is a nitride selectedfrom SiN, atomic layer deposition (ALD) SiBCN, flowable chemical vapordeposition (FCVD) Low-K SiN, and spin-on SiBCN